NPN Transistor GOODWORK BCP56 Offering 100V Collector Base Voltage and 80V Collector Emitter Voltage

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Product Description

BCP54/BCP55/BCP56 NPN Transistors

For AF driver and output stages, these NPN transistors offer high collector current, low collector-emitter saturation voltage, and are complementary to BCP51, BCP52, BCP53.

Technical Specifications

Parameter	Symbol	BCP54	BCP55	BCP56	Unit
Collector - Base Voltage	VCBO	45	60	100	V
Collector - Emitter Voltage	VCEO	45	60	80	V
Emitter - Base Voltage	VEBO	5	5	5	V
Collector Current - Continuous	IC	1	1	1	A
Collector Power Dissipation	PC	1.5	1.5	1.5	W
Thermal Resistance Junction to Ambient	RJA	83.3	83.3	83.3	/W
Junction Temperature	TJ	150	150	150
Storage Temperature Range	Tstg	-65 to 150	-65 to 150	-65 to 150
Collector-base breakdown voltage	VCBO	45	60	100	V
Collector- emitter breakdown voltage	VCEO	45	60	80	V
Emitter - base breakdown voltage	VEBO	5	5	5	V
Collector-base cut-off current	ICBO	0.1	0.1	0.1	uA
Emitter cut-off current	IEBO	0.1	0.1	0.1	uA
Collector-emitter saturation voltage	VCE(sat)	0.5	0.5	0.5	V
Base-emitter saturation voltage	VBE(sat)	1.2	1.2	1.2	V
Base-emitter voltage	VBE	1	1	1	V
DC current gain	hFE(1)	25	25	25
DC current gain	hFE(2)	63	63	63
DC current gain	hFE(3)	250	250	250
Transition frequency	fT	100	100	100	MHz