Electronic Component GOODWORK S9013 NPN Silicon Transistor with High Collector Current Capability

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Product Description

S9013 General Purpose Transistor NPN Silicon

The S9013 is a general-purpose NPN silicon transistor designed for various electronic applications. It offers high collector current capability, excellent hFE linearity, and is complementary to the S9012 transistor. Its robust performance makes it suitable for a wide range of circuit designs.

Product Attributes

Marking Type: S9013
Marking Code: J3
Classification of hFE Rank Range: L (120-200), J (200-350), H (300-400)
Pinout: 1. BASE, 2. EMITTER, 3. COLLECTOR

Technical Specifications

Characteristic	Symbol	Min	Max	Unit	Conditions
CollectorEmitter Voltage	VCEO		25	Vdc
CollectorBase Voltage	VCBO		40	Vdc
EmitterBase Voltage	VEBO		5.0	Vdc
Collector Current Continuous	IC		500	mAdc
Total Device Dissipation FR5 Board	PD		300	mW	TA = 25C
Junction and Storage Temperature	TJ,Tstg	-55	+150	C
CollectorEmitter Breakdown Voltage	V(BR)CEO	25		Vdc	IC = 1.0 mAdc, IB = 0
CollectorBase Breakdown Voltage	V(BR)CBO	40		Vdc	IC = 100 Adc, IE = 0
EmitterBase Breakdown Voltage	V(BR)EBO	5.0		Vdc	IE = 100 Adc, IC = 0
Collector cut-off current	ICBO		0.1	uAdc	VCB= 40 Vdc, IE = 0
Collector cut-off current	IEC		0.1	uAdc	VCE = 20 Vdc, IB = 0
Emitter cut-off current	IEBO		0.1	uAdc	VEB = 5 Vdc, IC = 0
CurrentGain Bandwidth Product	fT	150		MHz	IC = 20mAdc, VCE= 6.0Vdc, f =30MHz
DC Current Gain	hFE	120	400		IC = 50 mAdc, VCE = 1 Vdc
CollectorEmitter Saturation Voltage	VCE(sat)		0.6	Vdc	IC = 500 mAdc, IB = 50 mAdc
BaseEmitter Saturation Voltage	VBE(sat)		1.2	Vdc	IC = 500 mAdc, IB = 50 mAdc
Base-emitter voltage	VBE		0.7	V	VCB=1V,IC=10mA
Collector output capacitance	Cob		8.0	pF	VCB = 6.0Vdc, IE = 0, f = 1.0 MHz