China SOT23 PNP transistor GOODWORK 2N5401 designed for medium power amplification and switching functions for sale

SOT23 PNP transistor GOODWORK 2N5401 designed for medium power amplification and switching functions

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Product Description

Product Overview

The 2N5401 is a PNP bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It is complementary to the MMBT5551, offering ideal performance characteristics for these tasks.

Product Attributes

Brand: DEMACHEL
Model: 2N5401
Type: PNP TRANSISTOR
Package: SOT-23
Marking Code: 2L

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO				-160	V
CollectorEmitter Voltage	VCEO				-150	V
EmitterBase Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-0.6	A
Collector Dissipation	PC				0.3	W
Thermal Resistance Junction To Ambient	RthJA			416		/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC =-100uA, IE = 0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1 mA, IB = 0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	IE =-10uA, IC = 0	-5			V
Collector cut-off current	ICBO	VCB =-120V, IE = 0		-0.1		uA
Emitter cut-off current	IEBO	VEB =-4V, IC = 0		-0.1	-0.2	uA
DC current gain	hFE1	VC =-25V, IC =-10mA, IE = 80
DC current gain	hFE2	IC =-50mA, IB =-5mA		100
DC current gain	hFE3	IC =-10mA, IB =-1mA	50		100
Collector-emitter saturation voltage	VCE(sat)1	IC =-10mA, IB =-1mA		-0.5		V
Collector-emitter saturation voltage	VCE(sat)2	IC =-50mA, IB =-5mA		-1		V
Base-emitter saturation voltage	VBE(sat)1	IC =-10mA, IB =-1mA		-0.77	-1	V
Base-emitter saturation voltage	VBE(sat)2	IC =-50mA, IB =-5mA		-1	-1.2	V
Transition frequency	fT	VC =-25V, IC =-10mA, f=30MHz		300		MHz
Capacitance (output)	Cob	VCB = -10V, IE = 0, f=1MHz			10	pF
Capacitance (input)	Cib	Vcb = -10V, IE = 0, f=1MHz			20	pF