China Collector Current 1.5A PNP Bipolar Transistor GOODWORK MMBT8550D Voltage 40V Suitable for Circuits for sale

Collector Current 1.5A PNP Bipolar Transistor GOODWORK MMBT8550D Voltage 40V Suitable for Circuits

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Product Description

MMBT8550D PNP TRANSISTOR

The MMBT8550D is a PNP bipolar transistor designed for general-purpose applications. It offers high collector current capabilities and is suitable for various electronic circuits.

Product Attributes

Marking Type number: MMBT8550D
Marking code: Y2

Technical Specifications

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-Base Voltage	VCBO		-40		V
Collector-Emitter Voltage	VCEO		-25		V
Emitter-Base Voltage	VEBO		-5		V
Collector Current - Continuous	IC			-1.5	A
Collector Dissipation	PC			200	mW
Operation Junction and Storage Temperature Range	TJ,Tstg		-55	+150
Thermal Resistance From Junction To Ambient	RthJA			625	/W
Collector-base breakdown voltage	V(BR)CBO	IC =-100uA, IE = 0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-0.1 mA, IB = 0	-25		V
Emitter-base breakdown voltage	V(BR)EBO	IE =-100uA, IC = 0	-5		V
Collector cut-off current	ICBO	VCB =-40V, IE = 0		-0.1	uA
Collector cut-off current	ICBO	VEB =-5V, IC = 0		-0.1	uA
DC current gain	hFE1	VC =-10V, IC =-50mA, IB = -0.1 mA	120
DC current gain	hFE2	IC =-800mA, IB =-80mA		400
Transition frequency	fT	VC =-10V, IC =-50mA		30	MHz
Emitter cut-off current	IEBO	VC =-20V, IB =0		-0.1	uA
Collector-emitter saturation voltage	VCE(sat)	IC =-800mA, IB =-80mA		-1.2	V
Base-emitter saturation voltage	VBE(sat)	IC =-800mA, IB =-80mA		-1.5	V
Base-emitter voltage	VBE	VC =-10V, IC =-10mA		-1	V
Collector output capacitance	Cob	VC =-10V, IE =0, f=1MHz		20	pF