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Dual transistor NPN plus PNP epitaxial planar die GOODWORK MMDT2227 for power amplification and switching

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The MMDT2227 is a DUAL TRANSISTOR (NPN+PNP) featuring epitaxial planar die construction. It integrates one 2222A NPN transistor and one 2907A PNP transistor, making it ideal for power amplification and switching applications.

Product Attributes

  • Marking: K27

Technical Specifications

ModelParameterSymbolTest ConditionsMinMaxUnit
NPN 2222ACollector-Base VoltageVCBO75V
Collector-Emitter VoltageVCEO40V
Emitter-Base VoltageVEBO6V
Collector Current -ContinuousIC600mA
Collector Power DissipationPCTa=25200mW
Junction TemperatureTJ150
Storage TemperatureTstg-55150
Collector-base breakdown voltageV(BR)CBOIC= 10A, IE=075V
Collector-emitter breakdown voltageV(BR)CEOIC= 10mA, IB=040V
Emitter-base breakdown voltageV(BR)EBOIE=10A.IC=06V
Collector cut-off currentICBOVCB= 60V, IE=010nA
Collector cut-off currentICEXVCE= 60V,VEB(off)=3V10nA
Emitter cut-off currentIEBOVEB= 3 V, IC=010nA
DC current gainhFEVCE=10V, IC= 0.1mA35
DC current gainhFEVCE=10V, IC= 1mA50
DC current gainhFEVCE=10V, IC= 10mA75
DC current gainhFEVCE=10V, IC= 150mA100300
PNP 2907ACollector-Base VoltageVCBO-60V
Collector-Emitter VoltageVCEO-60V
Emitter-Base VoltageVEBO-5V
Collector Current -ContinuousIC-600mA
Collector Power DissipationPCTa=25200mW
Junction TemperatureTJ150
Storage TemperatureTstg-55150
Collector-base breakdown voltageV(BR)CBOIC= -10A, IE=0-60V
Collector-emitter breakdown voltageV(BR)CEOIC= -10mA, IB=0-60V
Emitter-base breakdown voltageV(BR)EBOIE=-10A, IC=0-5V
Collector cut-off currentICBOVCB=-50V, IE=0-10nA

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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