PNP transistor GOODWORK S8550 featuring 05A collector current suitable for general applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The S8550 is a PNP transistor, complementary to the S8050. It is designed for general-purpose applications with a collector current of up to 0.5A. The transistor is available in a SOT-23 package.

Product Attributes

Marking Type number: S8550
Marking code: 2TY

Technical Specifications

Symbol	Parameter	Test conditions	Min	Max	Unit
CLASSIFICATION OF hFE1
Rank Range			L 120-200
			H 300-400
			J 200-350
MAXIMUM RATINGS
VCBO	CollectorBase Voltage		-40		V
VCEO	CollectorEmitter Voltage		-25		V
VEBO	EmitterBase Voltage		-5		V
IC	Collector Current Continuous			-0.5	A
PC	Collector Dissipation	(Ta=25 unless otherwise noted)		0.3	W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55~+150
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
V(BR)CBO	Collector-base breakdown voltage	IC =-100uA, IE = 0	-40		V
V(BR)CEO	Collector-emitter breakdown voltage	IC =-1 mA, IB = 0	-25		V
V(BR)EBO	Emitter-base breakdown voltage	IE =-100uA, IC = 0	-5		V
ICBO	Collector cut-off current	VCB =-40V, IE = 0		-0.1	uA
IEBO	Emitter cut-off current	VEB =-3V, IC = 0		-0.1	uA
hFE1	DC current gain	VC =-6V, IC =-20mA	120	350
hFE2	DC current gain	IC =-500mA, IB =-50mA	50	150
fT	Transition frequency	IC =-50mA, VCE =-10V		30	MHZ
VCE(sat)	Collector-emitter saturation voltage	IC =-500mA, IB =-50mA		-1.2	V
VBE(sat)	Base-emitter saturation voltage	IC =-500mA, IB =-50mA		-1.2	V
ICEO	Collector cut-off current	VCE =-20V, IB =0		-0.1	uA
MECHANICAL DATA (SOT-23)
UNIT	mm	mil	min	max	min	max
A			1.1	1.4	43	55
C			0.0	0.15	0	6
D			2.8	3.0	110	118
E			2.2	2.6	87	102
HE			0.3	0.5	12	20
e			0.9	1.04	35	41 (ref)
L			0.36	0.56	14	22 (ref)
L1			0.08	0.15	3	6
a			0.0	0.1	0	4 (ref)