High Voltage NPN Transistor with 350V Collector Emitter Voltage GOODWORK MMBT6517 in SOT23 Package

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Product Description

Product Overview

High Voltage Transistor, NPN Plastic-Encapsulate Transistors in SOT-23 package. Features include a high Collector-Emitter Voltage of 350V and a maximum Collector Dissipation of 250mW. Suitable for various electronic applications requiring high voltage switching.

Product Attributes

Brand: DEMACHEL
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
MMBT6520 / MMBT6517	VCEO				350	V
	PC (max)				250	mW
	IC				500	mA
Absolute Maximum Ratings	BVCBO				350	V
	BVCEO				350	V
	BVEBO				6	V
	Tj				150
Electrical Characteristics	BVCBO	IC = 100A, IE = 0	350			V
Electrical Characteristics	BVCEO	IC = 1mA, IB = 0	350			V
Emitter-base breakdown voltage	BVEBO	IE = 100A, IC = 0			6	V
Collector cut-off current	ICBO	VCB = 250V, IE = 0			50	nA
Emitter cut-off current	IEBO	VEB = 5V, IC = 0			50	nA
DC current gain	hFE	VCE = 10V, IB= 10mA	30		200
		VCE = 10V, IB= 30mA	30		200
		VCE = 10V, IB= 50mA	20
		VCE = 10V, IB= 100mA	10
Collector-emitter saturation voltage	VCE(sat)	IC = 10mA, IB = 1mA		0.3		V
		IC = 30mA, IB = 3mA		0.5		V
		IC = 50mA, IB = 5mA		1		V
Base-emitter saturation voltage	VBE(sat)	IC = 10mA, IB = 1mA		0.75		V
Base-emitter saturation voltage	VBE(sat)	IC = 30mA, IB = 3mA		0.9		V
Base-emitter on Voltage	VBE(on)	VCE = 10V, IC= 100mA		2		V
Transition frequency	fT	VCE = 20V, IB = 10mA	40		200	MHZ
Output capacitance	Cob	VCE = 20V, IE =0, f=1MHz			6	pF