Epitaxial planar transistor GOODWORK MMDT3904DW suitable for amplification and switching circuits

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Product Description

MMDT3904DW

Epitaxial planar die construction. Ideal for low power amplification and switching applications.

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	IC=10A,IE=0			60	V
V(BR)CEO	Collector-emitter breakdown voltage	IC=1mA,IB=0			40	V
V(BR)EBO	Emitter-base breakdown voltage	IE=10A,IC=0			5	V
ICBO	Collector cut-off current	VCB=30V,IE=0		0.05		A
IEBO	Emitter cut-off current	VEB=5V,IC=0		0.05		A
hFE(1)	DC current gain	VCE=1V,IC=1mA	70
hFE(2)	DC current gain	VCE=1V,IC=10mA		100	300
hFE(3)	DC current gain	VCE=1V,IC=50mA		60
hFE(4)	DC current gain	VCE=1V,IC=100mA		30
VCE(sat)1	Collector-emitter saturation voltage	IC=10mA,IB=1mA		0.2		V
VCE(sat)2	Collector-emitter saturation voltage	IC=50mA,IB=5mA		0.3		V
VBE(sat)1	Base-emitter saturation voltage	IC=10mA,IB=1mA		0.65	0.85	V
VBE(sat)2	Base-emitter saturation voltage	IC=50mA,IB=5mA		0.95		V
fT	Transition frequency	VCE=20V,IC=10mA,f=100MHz			300	MHz
Cob	Collector output capacitance	VCB=5V,IE=0,f=1MHz			4	pF
NF	Noise figure	VCE=5V,Ic=0.1mA,f=1kHz,RS=1K			5	dB
td	Delay time				35	nS
tr	Rise time	VCC=3V, VBE(off)=-0.5V IC=10mA , IB1=-IB2= 1mA			35	nS
ts	Storage time				200	nS
tf	Fall time	VCC=3V, IC=10mA IB1=-IB2=1mA			50	nS
ICEX	Collector cut-off current	VCE=30V,VBE(off)= -3V		0.05		A