Surface mount PNP transistor MMBTA56 featuring epitaxial planar die for amplification and switching

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Price: Negotiable

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Delivery Time: Negotiable

Product Description

Product Overview

The MMBTA55 / MMBTA56 are PNP small signal surface mount transistors featuring epitaxial planar die construction. They are ideal for low power amplification and switching applications. Complementary NPN types (MMBTA05 / MMBTA06) are also available.

Product Attributes

Brand: DEMAC
Package Type: SOT-23

Technical Specifications

Characteristic	Symbol	MMBTA55 (Min)	MMBTA55 (Max)	MMBTA56 (Min)	MMBTA56 (Max)	Unit	Test Condition
Collector-Base Breakdown Voltage	V(BR)CBO	-60		-80		V	IC = -100A, IE = 0
Collector-Emitter Breakdown Voltage	V(BR)CEO	-60		-80		V	IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage	V(BR)EBO		-4.0		-4.0	V	IE = -100A, IC = 0
Collector Cutoff Current	ICBO		-100		-100	nA	VCB = -60V, IE = 0 (MMBTA55); VCB = -80V, IE = 0 (MMBTA56)
Collector Cutoff Current	ICEX		-100		-100	nA	VCE = -60V, IBO = 0V (MMBTA55); VCE = -80V, IBO = 0V (MMBTA56)
DC Current Gain	hFE	100		100			IC = -10mA, VCE = -1.0V
DC Current Gain	hFE						IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage	VCE(SAT)		-0.25		-0.25	V	IC = -100mA, IB = -10mA
Base-Emitter Saturation Voltage	VBE(SAT)		-1.2		-1.2	V	IC = -100mA, VCE = -1.0V
Current Gain-Bandwidth Product	fT	50		50		MHz	VCE = -1.0V, IC = -100mA, f = 100MHz
Collector Current - Continuous	IC		-500		-500	mA	@TA = 25C
Power Dissipation	Pd		300		300	mW	@TA = 25C
Thermal Resistance, Junction to Ambient	RJA		417		417	C/W
Operating and Storage Temperature Range	Tj, TSTG	-55	+150	-55	+150	C