China electronic transistor GOODWORK MMBT8050D NPN type suitable for switching and amplification circuits for sale

electronic transistor GOODWORK MMBT8050D NPN type suitable for switching and amplification circuits

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Product Description

MMBT8050D NPN Transistor

The MMBT8050D is an NPN transistor designed for general-purpose applications. Its robust design and specific electrical characteristics make it suitable for various switching and amplification tasks in electronic circuits.

Product Attributes

Marking Code: J3Y
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
CollectorBase Voltage	VCBO				40	V
CollectorEmitter Voltage	VCEO				25	V
EmitterBase Voltage	VEBO				5	V
Collector Current Continuous	IC				500	mA
Collector Power Dissipation	PC				300	mW
Operation Junction and Storage Temperature Range	TJ,Tstg		-55		+150
Thermal Resistance From Junction To Ambient	RthJA			417	/W
Collector-base breakdown voltage	V(BR)CBO	IC = 100uA, IE = 0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC = 1 mA, IB = 0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE = 100uA, IC = 0	5			V
Collector cut-off current	ICBO	VCB = 40V, IE = 0			0.1	uA
Emitter cut-off current	IEBO	VEB = 5V, IC =0			0.1	uA
DC current gain	hFE1	VCE = 1V, IC = 50mA	120		400
DC current gain	hFE2	IC = 500mA, IB = 50mA		150
Collector-emitter saturation voltage	VCE(sat)	IC = 500mA, IB = 50mA		0.6	1.2	V
Base-emitter saturation voltage	VBE(sat)	IC = 500mA, IB = 50mA		0.6	1.2	V
Transition frequency	fT	VCE = 6V, IC = 20mA, f=30MHz		100		MHZ
Collector cut-off current	ICEO	VCE = 20V, IB=0			0.1	uA