Electronic Component GOODWORK 2SA1037-R PNP Silicon Epitaxial Planar Transistor with High DC Current Gain
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 2SA1037-R is a PNP Silicon Epitaxial Planar Transistor. It is subdivided into three groups (Q, R, and S) based on its DC current gain. This transistor can be manufactured in different pin configurations upon special request.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Silicon
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Q | R | S | Unit |
| Collector Base Voltage | -VCBO | 60 V | |||
| Collector Current | -IC | 150 mA | |||
| Power Dissipation | Ptot | 200 mW | |||
| Junction Temperature | Tj | 150 OC | |||
| Storage Temperature Range | TS | -55 to +150 OC | |||
| DC Current Gain | hFE | 120 - 270 | 180 - 390 | 270 - 560 | - |
| Collector Cutoff Current | -ICBO | - 0.1 A | |||
| Emitter Cutoff Current | -IEBO | - 0.1 A | |||
| Collector Saturation Voltage | -VCE(sat) | - 0.5 V | |||
| Collector Base Breakdown Voltage | -V(BR)CBO | 60 - V | |||
| Collector Emitter Breakdown Voltage | -V(BR)CEO | 50 - V | |||
| Emitter Base Breakdown Voltage | -V(BR)EBO | 6 - V | |||
| Transition Frequency | fT | 120 - MHz |
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