NPN Transistor GOODWORK MJE182 Designed for Low Current High Speed Switching and Amplification

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Product Description

MJE182 NPN TO-126 Plastic-Encapsulate Transistors

The MJE182 is an NPN transistor designed for low power audio amplification and low current high-speed switching applications. It offers high current output up to 3A, low saturation voltage, and is a complement to the MJE172 transistor.

Product Attributes

Package: TO-126 Plastic-Encapsulate

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Breakdown Voltage	BVCBO	IC = 100A, IE = 0	100			V
	BVCEO	IC = 1mA, IB = 0			80	V
	BVEBO	IE = 100A, IC = 0			7	V
	ICBO	VCB = 100V, IB = 0			0.1	A
	IEBO	VEB = 7V, IC = 0			0.1	A
DC Current Gain	hFE	VCE=1V, IC= 100mA	50		250
		VCE=1V, IC= 500mA	30
		VCE=1V, IC= 1.5A	12
Collector-Emitter Saturation Voltage	VCE(sat)	IC = 500mA, IB = 50mA		0.3		V
		IC = 1.5A, IB = 150mA		0.9		V
		IC = 3A, IB = 600mA		1.7		V
Base-Emitter Saturation Voltage	VBE(sat)	IC = 1.5A, IB = 150mA		1.5		V
Base-Emitter Saturation Voltage		IC = 3A, IB = 600mA		2.0		V
Base-Emitter On Voltage	VBE(on)	VCE=1V, IC= 500mA		1.2		V
Transition Frequency	fT	VCE = 10V, IB = 100mA		50		MHz
Output Capacitance	Cob	VCB = 10V,IE = 0,f=1MHz			30	pF

Absolute Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-Base Voltage	BVCBO	100	V
Collector-Emitter Voltage	BVCEO	80	V
Emitter-Base Voltage	BVEBO	7	V
Collector Current (DC)	IC	3	A
Collector Current (Pulse)	ICP	6	A
Power Dissipation (TA=25)	PC	1.5	W
Power Dissipation (TC=25)		12.5	W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55150