NPN transistor GOODWORK MMBTA42 designed to support peak collector current in electronic applications

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Product Description

MMBTA42 NPN Transistor

The MMBTA42 is an NPN transistor designed for high breakdown voltage and low collector-emitter saturation voltage. It serves as a complementary part to the MMBTA92. This transistor is suitable for various electronic applications requiring reliable switching and amplification.

Product Attributes

Marking Type: MMBTA42
Marking Code: 1D

Technical Specifications

Symbol	Parameter	Test conditions	Min	Max	Unit
V_CBO	CollectorBase Voltage			300	V
V_CEO	CollectorEmitter Voltage			300	V
V_EBO	EmitterBase Voltage			5	V
I_C	Collector Current - Continuous			0.5	A
I_CM	Collector Current - Peak			0.3	A
P_C	Collector Power Dissipation	(Ta=25)		0.35	W
R_thJA	Thermal Resistance, junction to Ambient			357	/W
T_stg	Storage Temperature		-55	+150
T_J	Junction Temperature			150
V_(BR)CBO	Collector-base breakdown voltage	I_C = 100uA, I_E = 0	300		V
V_{CEO (BR)}	Collector-emitter breakdown voltage	I_C = 1mA, I_B = 0	300		V
V_{EBO (BR)}	Emitter-base breakdown voltage	I_E = 100uA, I_C = 0	5		V
I_CBO	Collector cut-off current	V_CB = 200V, I_E = 0		0.1	uA
I_EBO	Emitter cut-off current	V_EB = 5V, I_C = 0		0.2	uA
h_FE(1)	DC current gain	V_CE = 10V, I_C = 1mA	60
h_FE(2)	DC current gain	V_CE = 20V, I_C = 10mA	100
h_FE(3)	DC current gain	V_CE = 10V, I_C = 30mA	60	200
V_CE(sat)	Collector-emitter saturation voltage	I_C = 20mA, I_B = 2mA		0.25	V
V_BE(sat)	Base-emitter saturation voltage	I_C = 20mA, I_B = 2mA		0.9	V
f_T	Transition frequency	V_CE = 10V, I_C = 10mA, f=30MHz		50	MHz