Epitaxial silicon planar PNP transistor for switching applications RoHS compliant GOODWORK 2SA1015

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Price: Negotiable

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Product Description

PNP General Purpose Switching Transistor - BA

This PNP epitaxial silicon planar transistor is designed for general purpose switching applications. It offers a collector-emitter voltage of -50V and a collector current of -0.15A, with a total device dissipation of 0.2W on an FR-5 board. The transistor is RoHS 2002/95/EC compliant and features a transition frequency greater than 80MHz. It is supplied in a SOT-23 package.

Product Attributes

Brand: Not specified (Implied 2SA1015)
Origin: Not specified
Material: Epitaxial silicon, planar design
Color: Not specified
Certifications: RoHS 2002/95/EC

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Collector-Base Voltage	VCBO				-50	V
Collector-Emitter Voltage	VCEO				-50	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-0.15	A
Total Device Dissipation (FR-5 BOARD)	PD				0.2	W
Thermal Resistance Junction to Ambient	RJA			625		OC/W
Junction Temperature	TJ				150	OC
Storage Temperature	TSTG		-55		+150	OC
Collector-Base breakdown voltage	V(BR)CBO	IC=-100uA,IE=0	-50			V
Collector-Emitter breakdown voltage	V(BR)CEO	IC=-0.1mA,IB=0	-50			V
Emitter-Base breakdown voltage	V(BR)EBO	IE=-100uA,IC=0	-5			V
Collector cut-off current	ICBO	VCB=-50V,IC=0			-0.1	uA
Collector cut-off current	ICEX				-0.1	uA
Base cut-off current	IBEX				-0.1	uA
Emitter cut-off current	IEBO	VEB=-5V,IC=0			-0.1	uA
DC current gain	HFE	IC=-2mA,VCE=-6V	130		400
DC current gain	HFE	IC=-10mA,IB=-1mA		100
DC current gain	HFE	IC=-100mA,IB=-10mA		100
Collector-Emitter saturation voltage	VCE(SAT)	IC=-10mA,IB=-1mA		-0.2		V
Collector-Emitter saturation voltage	VCE(SAT)	IC=-100mA,IB=-10mA		-0.3		V
Base-Emitter Saturation voltage	VBE(SAT)	IC=-10mA,IB=-1mA		-0.85		V
Base-Emitter Saturation voltage	VBE(SAT)	IC=-100mA,IB=-10mA		-0.95		V
Input capacitance	CIB	VCB=-5V,IE=0,f=1MHZ		4.0		pF
Output capacitance	COB	VEB=-0.5V,IC=0,f=1MHZ		8.0		pF
Transition ferquency	fT	IC=-1mA,VCE=-10V, f=30MHZ		150		MHZ
Delay time	td	VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA		35		nS
Rise time	tr	VCC=-3V,VBE=0.5V, IC=-10mA,IB=-1mA		35		nS
Storage time	ts	VCC=-3V,VBE=0.5V, IB1=IB2=-1mA		200		nS
Fall time	tf	VCE=-25V,IB=0		50		nS