Dual PNP Transistor Solution GOODWORK BC857BS in SOT363 Package for Electronic Component Optimization

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The BC857BS is a SOT-363 dual transistor package containing two PNP transistors. It offers reduced component count and board space without mutual interference between the transistors, making it suitable for various electronic applications.

Product Attributes

Marking: 3C
Package: SOT-363
Type: DUAL TRANSISTOR (PNP+PNP)
Brand: Not specified
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	Ic=-10A,IE=0			-50	V
V(BR)CEO	Collector-emitter breakdown voltage	Ic=-10mA,IB=0			-45	V
V(BR)EBO	Emitter-base breakdown voltage	IE=-10A,IC=0			-5	V
ICBO	Collector cut-off current	VCB=-30V,IE=0			-15	nA
hFE	DC current gain	VCE=-5V,IC=-2mA	200		450
VCE(sat)(1)	Collector-emitter saturation voltage	IC=-10mA,IB=-0.5mA		-0.3		V
VCE(sat)(2)	Collector-emitter saturation voltage	IC=-100mA,IB=-5mA		-0.65		V
VBE(1)	Base-emitter voltage	VCE=-5V,IC=-2mA		-0.6	-0.75	V
VBE(2)	Base-emitter voltage	VCE=-5V,IC=-10mA		-0.82		V
fT	Transition frequency	VCE=-5V,IC=-10mA,f=100MHz		200		MHz
Cob	Collector output capacitance	VCB=-10V,IE=0,f=1MHz		3.5		pF
NF	Noise figure	VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2K,BW=200Hz		2.5		dB

Maximum Ratings

Symbol	Parameter	Value	Units
VCBO	Collector- Base Voltage	-50	V
VCEO	Collector-Emitter Voltage	-45	V
VEBO	Emitter-Base Voltage	-5	V
IC	Collector Current -Continuous	-0.2	A
PC	Collector Power Dissipation	0.3	W
RJA	Thermal Resistance from Junction to Ambient	417	/W
TJ,Tstg	Operation Junction and Storage Temperature Range	-55~+150