Medium power NPN transistor GOODWORK 2L-MMBT5401 suitable for amplification switching applications

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Product Description

MMBT5551 NPN TRANSISTOR

The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401.

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
VCBO	CollectorBase Voltage	IC = 100uA, IE = 0			180	V
VCEO	CollectorEmitter Voltage	IC = 1 mA, IB = 0			160	V
VEBO	EmitterBase Voltage	IE = 10uA, IC = 0			6	V
IC	Collector Current Continuous				600	mA
PC	Collector Power Dissipation	(Ta=25 unless otherwise noted)			300	mW
RthJA	Thermal Resistance From Junction To Ambient			416	/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55		+150
V(BR)CBO	Collector-base breakdown voltage	VCB = 120V, IE = 0	180			V
V(BR)CEO	Collector-emitter breakdown voltage	VCE = 5V, IC = 10mA	160			V
V(BR)EBO	Emitter-base breakdown voltage	IC = 10mA, IB = 1mA	6			V
ICBO	Collector cut-off current	VCB = 10V, IE = 0, f=1MHz			1	nA
IEBO	Emitter cut-off current	VEB = 4V, IC =0			1	nA
hFE1	DC current gain	VCE = 5V, IC=1mA	100
hFE2	DC current gain	IC = 50mA, IB = 5mA		300
hFE3	DC current gain	VCE = 5V, IC = 50mA		300
VCE(sat)1	Collector-emitter saturation voltage	IC = 10mA, IB = 1mA		0.15		V
VCE(sat)2	Collector-emitter saturation voltage	IC = 50mA, IB = 5mA		0.2		V
VBE(sat)1	Base-emitter saturation voltage	IC = 10mA, IB = 1mA		0.6		V
VBE(sat)2	Base-emitter saturation voltage	IC = 50mA, IB = 5mA		0.77		V
Cob	Collector output capacitance	VCB = 10V, IE = 0, f=1MHz			10	pF
fT	Transition frequency	VCE = 10V, IC = 10mA, f=100MHz	50			MHz
fT	Transition frequency	VCE = 10V, IC = 50mA, f=100MHz		100		MHz