NPN Silicon Transistor with High Voltage and Current Capability GOODWORK CXT5551 Surface Mount Device

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The CXT5551 is a Surface Mount NPN Silicon Transistor featuring a simplified SOT-89 outline. It offers high current capability (max. 500mA) and high voltage (max. 150 V), making it suitable for various electronic applications.

Product Attributes

Brand: CXT5551
Package: SOT-89
Type: NPN Silicon Transistor
Pinout: 1.Base, 2.Collector, 3.Emitter

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	VCBO	IC=100 A	180			V
Collector-emitter breakdown voltage	VCEO	IC=1.0mA	160			V
Emitter-base breakdown voltage	VEBO	IE=10 A			6.0	V
Collector cutoff current	ICBO	VCB = 120 V, IE = 0			50	nA
Collector cutoff current	ICBO	VCB = 120 V, TA=100			50	A
DC current gain	hFE	IC = 1.0 mA; VCE = 5.0 V	80
DC current gain	hFE	IC = 10mA; VCE = 5.0V		80	250
DC current gain	hFE	IC = 50 mA; VCE = 5.0V		30
Collector to emitter saturation voltage	VCE(sat)	IC = 10 mA; IB = 1.0mA		0.15		V
Collector to emitter saturation voltage	VCE(sat)	IC = 50 mA; IB = 5.0mA		0.20		V
Base to emitter saturation voltage	VBE(sat)	IC = 10 mA; IB = 1.0mA		1.00		V
Base to emitter saturation voltage	VBE(sat)	IC = 50 mA; IB = 5.0mA		1.00		V
Output capacitance	Cob	VCB = 10 V, IE = 0,f=1.0MHz			6.0	pF
Transition frequency	fT	IC = 10 mA; VCE =10V; f = 100 MHz		100	300	MHz

Parameter	Symbol	Rating	Unit
Collector-base voltage	VCBO	180	V
Collector-emitter voltage	VCEO	160	V
Emitter-base voltage	VEBO	6	V
Collector current (DC)	IC	600	mA
Power dissipation	PD	1.2	W
Junction-to-ambient thermal resistance	R JA	104	/W
Junction temperature	Tj	150
Storage temperature	Tstg	-65 to +150