Compact Plastic Encapsulated Transistor for Medium Power Switching and Amplification GOODWORK MMDT5551

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Product Description

MMDT5551 - Complementary Plastic Encapsulated Transistor

The MMDT5551 is a complementary transistor designed for medium power amplification and switching applications. It features a small surface mount package, making it ideal for space-constrained designs. Its complementary nature to the MMDT5551DW offers design flexibility.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current	IC				-600	mA
Collector Power Dissipation	PC	(Ta=25)			300	mW
Thermal Resistance Junction to Ambient	RJA				625	/W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0			-160	V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0			-150	V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0			-5	V
Collector cut-off current	ICBO	VCB=-120V, IE=0			-50	nA
Emitter cut-off current	IEBO	VEB=-3V, IC=0			-50	nA
DC current gain	hFE	VCE=-5V, IC=-1mA	50
DC current gain	hFE	VCE=-5V, IC=-10mA		60
DC current gain	hFE	VCE=-5V, IC=-50mA			300
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA			-0.5	V
Collector-emitter saturation voltage	VCE(sat)	IC=-10mA, IB=-1mA		-0.2		V
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, IB=-5mA			-1	V
Base-emitter saturation voltage	VBE(sat)	IC=-10mA, IB=-1mA		-0.5		V
Base-emitter saturation voltage	VBE(sat)	IC=-50mA, IB=-5mA			-1	V
Transition frequency	fT	VCE=-10V,IC=-10mA , f=100MHz			100	MHz
Collector output capacitance	Cob	VCB=-10V, IE=0, f=1MHz			6	pF