PNP transistor epitaxial planar die GOODWORK PMBT3906 GK designed for electronic circuit performance

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Product Description

Product Overview

The PMBT3906 is a PNP epitaxial planar die construction transistor designed as a complementary type to the NPN transistor MMBT3904. It is suitable for various electronic applications requiring reliable transistor performance.

Product Attributes

Marking Type number: PMBT3906
Marking code: 2A
Construction: Epitaxial planar die
Type: PNP TRANSISTOR

Technical Specifications

Parameter	Symbol	Test conditions	Min	Max	Unit
CollectorBase Voltage	VCBO		-40		V
CollectorEmitter Voltage	VCEO		-40		V
EmitterBase Voltage	VEBO		-5		V
Collector Current Continuous	IC			-0.2	A
Collector Dissipation	PC			0.2	W
Thermal Resistance From Junction To Ambient	RthJA			625	/W
Operation Junction and Storage Temperature Range	TJ,Tstg		-55~+150
Collector-base breakdown voltage	V(BR)CBO	IC =-10uA, IE = 0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1 mA, IB = 0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE =-10uA, IC = 0	-5		V
Collector cut-off current	ICBO	VCB =-40V, IE = 0		-50	nA
Collector cut-off current	ICEX	VCE =-30V, VCE=-3V		-100	nA
DC current gain	hFE1	VEB =-5V, IC = 0	-100
DC current gain	hFE2	VCE =-3V, IC =-10mA, IB1= 1mA	-100
DC current gain	hFE3	VCC =-3V, IC =-10mA,IB1= 1mA		300
Collector-emitter saturation voltage	VCE(sat)	IC =-50mA, IB =-5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC =-50mA, IB =-5mA		-0.95	V
Delay time	td	VCE =-2V, IC =-100mA		30	ns
Rise time	tr	VCE =-1V, IC =-50mA		35	ns
Storage time	ts	VCE =-1V, IC =-10mA		225	ns
Fall time	tf			75	ns
Transition frequency	fT	IC =-10mA, f=100MHz		300	MHz
Emitter cut-off current	IEBO	VBE =-0.5V		-100	nA