NPN General Purpose Transistor GOODWORK MMST3904 with High Collector Base Breakdown Voltage Rating

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Product Description

MMST3904 - NPN General Purpose Transistor

The MMST3904 is a high-performance NPN general purpose transistor designed for a wide range of applications. It offers complementary functionality to the MMST3906 and is housed in a compact SOT-323 package, making it suitable for space-constrained designs.

Product Attributes

Package: SOT-323

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO*	IC=10A, IE=0	60			V
Collector-Emitter Breakdown Voltage	V(BR)CEO*	IC=1mA, IB=0	40			V
Emitter-Base Breakdown Voltage	V(BR)EBO*	IE=10A, IC=0	5			V
Collector Cut-off Current	ICBO*	VCB=60V, IE=0			60	nA
Collector Cut-off Current	ICEX	VCE=30V, VBE(off)=3V			50	nA
DC Current Gain	hFE*	VCE=1V, IC=10mA, IB=1mA			0.25
DC Current Gain	hFE*	VCE=1V, IC=10mA	40
DC Current Gain	hFE*	VCE=1V, IC=100A		70
DC Current Gain	hFE*	VCE=1V, IC=1mA		100
DC Current Gain	hFE*	VCE=1V, IC=10mA		300
DC Current Gain	hFE*	VCE=1V, IC=50mA
Collector-Emitter Saturation Voltage	VCE(sat)*	IC=10mA, IB=1mA		0.25		V
Collector-Emitter Saturation Voltage	VCE(sat)*	IC=50mA, IB=5mA		0.3		V
Base-Emitter Saturation Voltage	VBE(sat)*	IC=10mA, IB=1mA		0.85		V
Base-Emitter Saturation Voltage	VBE(sat)*	IC=50mA, IB=5mA		0.95		V
Transition Frequency	fT	VCE=20V,IC=10mA , f=100MHz		300		MHz
Collector Output Capacitance	Cob	VCB=5V, IE=0, f=1MHz			4	pF
Collector Output Capacitance	Cib	VEB=0.5V, IE=0, f=1MHz			8	pF
Delay Time	td	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA		35		ns
Rise Time	tr	VCC=3V, VBE(off)=0.5V IC=10mA, IB1=1mA		35		ns
Storage Time	ts	VCC=3V, IC=10mA, IB1= IB2=1mA		225		ns
Fall Time	tf	VCC=3V, IC=10mA, IB1= IB2=1mA		75		ns