PNP Bipolar Transistor Guangdong Hottech SS8550 Featuring High Collector Current and Compact Design

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Product Description

Product Overview

The SS8550 is a PNP bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, making it a complementary device to the SS8050. This transistor is suitable for various electronic circuits requiring robust performance in a compact SOT-23 package.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Complementary to: SS8050
Case Material: Molded Plastic
Flammability Classification: UL 94V-0
Marking: Y2

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	-40	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-1500	mA
Collector Power Dissipation	PC	300	mW	TA = 25C
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	-40	V	IC=-100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-25	V	IC=-0.1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-100uAIC=0
Collector cut-off current	ICBO	-0.1	uA	VCB=-40V, IE=0
Collector cut-off current	ICEO	-0.1	uA	VCE=-20V, IB=0
Emitter cut-off current	IEBO	-0.1	uA	VEB=-5V, IC=0
DC current gain	hFE1	120		VCE=-1V, IC=-100mA
DC current gain	hFE1	400		VCE=-1V, IC=-100mA
DC current gain	hFE2	40		VCE=-1V, IC=-800mA
Collector-emitter saturation voltage	VCE(sat)	-0.5	V	IC=-800mAIB=-80mA
Base-emitter saturation voltage	VBE(sat)	-1.2	V	IC=-800mAIB=-80mA
Base-emitter voltage	VBE	-1	V	VCE=-1V,IC=-10mA
Transition frequency	fT	100	MHz	VCE=-10V,IC=-50mA,f=30MHz
Collector output capacitance	Cob	20	pF	VCE=-10V, IE=0, f=1MHz