Compact SOT89 NPN Bipolar Transistor Guangdong Hottech D882 with Large Power Dissipation Capability

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Product Description

Product Overview

The D882 is an NPN bipolar transistor designed for surface mount applications. It offers large power dissipation and is complementary to the B772 transistor. This device is suitable for various electronic circuits requiring robust performance in a compact SOT-89 package.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Complementary To: B772
Case Material: Molded Plastic, UL flammability Classification Rating: 94V-0
Marking: D882

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	30	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	3	A
Collector Power Dissipation	PC	500	mW
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	40	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	30	V	IC=10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE=100uAIC=0
Collector cut-off current	ICBO	1	uA	VCB=40V, IE=0
Collector cut-off current	ICEO	10	uA	VCE=30V, IB=0
Emitter cut-off current	IEBO	1	uA	VEB=6V, IC=0
DC current gain (hFE1)	hFE1	60-400		VCE=2V, IC=1A
DC current gain (hFE2)	hFE2	32		VCE=2V, IC=100mA
Collector-emitter saturation voltage	VCE(sat)	0.5	V	IC=2AIB=0.2A
Base-emitter saturation voltage	VBE(sat)	1.5	V	IC=2AIB=0.2A
Transition frequency	fT	50	MHz	VCE=5V, IC=0.1A, f=10MHz
Thermal Resistance From Junction To Ambient	RJA	250	C/W

SOT-89 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	1.400	1.600	0.055	0.063
b	0.320	0.520	0.013	0.020
b1	0.400	0.580	0.016	0.023
c	0.350	0.440	0.014	0.017
D	4.400	4.600	0.173	0.181
D1	1.550REF		0.061REF
E	2.300	2.600	0.091	0.102
E1	3.940	4.250	0.155	0.167
e	1.500TYP		0.060TYP
e1	3.000TYP		0.118TYP
L	0.900	1.200	0.035	0.047