Switching Transistor NPN Guangdong Hottech MMBT4401 SOT23 Package Molded Plastic Electronic Component

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Product Description

Product Overview

The MMBT4401 is a complementary NPN bipolar transistor designed for switching applications. It is a surface mount device housed in a SOT-23 package, offering a compact solution for various electronic circuits.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Complementary To: MMBT4403
Device Type: Switching Transistor
Package: SOT-23
Case Material: Molded Plastic
UL Flammability Classification: 94V-0

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	40	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	600	mA
Collector Power Dissipation	PC	300	mW	TA = 25C
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	60	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	40	V	IC=1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE=100uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=50V, IE=0
Collector cut-off current	ICEX	0.1	uA	VCE=35V, VBE=0.4V
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain	hFE1	20		VCE=1V, IC=0.1mA
DC current gain	hFE2	40		VCE=1V, IC=1mA
DC current gain	hFE3	80		VCE=1V, IC=10mA
DC current gain	hFE4	100-300		VCE=1V, IC=150mA
DC current gain	hFE5	40		VCE=2V, IC=500mA
Collector-emitter saturation voltage	VCE(sat)	0.4	V	IC=150mAIB=15mA
Collector-emitter saturation voltage	VCE(sat)	0.75	V	IC=500mAIB=50mA
Base-emitter saturation voltage	VBE(sat)	0.95	V	IC=150mAIB=15mA
Base-emitter saturation voltage	VBE(sat)	1.2	V	IC=500mAIB=50mA
Transition frequency	fT	250	MHz	VCE=10V,IC=20mA,f=100MHz
Delay time	td	15	ns	VCC=30V, VBE(OFF)=2V, IC=150mAIB1=15mA
Rise time	tr	20	ns	VCC=30V,IC=150mA IB1=IB2=15mA
Storage time	tS	225	ns	VCC=30V,IC=150mA IB1=IB2=15mA
Fall time	tf	60	ns	VCC=30V,IC=150mA IB1=IB2=15mA