SOT23 Package NPN Bipolar Transistor Guangdong Hottech BC850B Designed for Automatic Insertion and Amplifier

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Product Description

Product Overview

The BC850 is an NPN bipolar transistor designed for automatic insertion, making it ideal for high-volume manufacturing. It is well-suited for switching and AF amplifier applications. This surface mount device comes in a SOT-23 package.

Product Attributes

Complementary to BC860
Case Material: Molded Plastic
UL flammability Classification Rating: 94V-0
Weight: 0.008 grams (approximate)
Marking: 2F (BC850B), 2G (BC850C)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	100	mA
Collector Power Dissipation	PD	300	mW
Thermal Resistance Junction To Ambient	RJA	417	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	50	V	IC=10uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	45	V	IC=10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=10uAIC=0
Collector cut-off current	ICBO	15	nA	VCB=30V, IE=0
DC current gain	hFE1	200-800		VCE=5V, IC=2mA
Collector-emitter saturation voltage	VCE(sat)	0.09 - 0.25	V	IC=10mAIB=0.5mA
Collector-emitter saturation voltage	VCE(sat)	0.2 - 0.6	V	IC=100mAIB=5mA
Base-emitter saturation voltage	VBE(sat)	0.7	V	IC=10mAIB=0.5mA
Base-emitter saturation voltage	VBE(sat)	0.9	V	IC=100mAIB=5mA
Base-emitter voltage	VBE(ON)	0.58 - 0.7	V	VCE=5V,IC=2mA
Base-emitter voltage	VBE(ON)	0.77	V	VCE=5V,IC=10mA
Transition frequency	fT	300	MHz	VCE=5V,IC=10mA,f=100MHz
Collector output capacitance	Cob	2.5 - 4.5	pF	VCE=10V, IE=0, f=1MHz
Noise Figure	NF	1.0	dB	IC=0.2mA,VCE=5.0V Rg=10k,f=1.0kHz
hFE Rank		BC850B		Range 110-220
hFE Rank		BC850C		Range 420-800