PNP transistor Guangdong Hottech MMBT2907A suitable for amplifier applications in SOT23 surface mount

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Product Description

MMBT2907 PNP Bipolar Transistor

The MMBT2907 is a general-purpose PNP bipolar transistor designed for amplifier applications. It is complementary to the MMBT2222 and comes in a surface-mount SOT-23 package.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Case Material: Molded Plastic
Flammability Classification: UL 94V-0
Complementary to: MMBT2222

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	-60	V
Collector-Emitter Voltage	VCEO	-60	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-600	mA
Collector Power Dissipation	PC	250	mW
Thermal Resistance Junction To Ambient	RJA	500	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	-60	V	IC=-10 uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-60	V	IC=-10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-10uAIC=0
Collector cut-off current	ICBO	-20	nA	VCB=-50V, IE=0
Collector cut-off current	ICEX	-50	nA	VCE=-30V, VBE(OFF)=-0.5V
Emitter cut-off current	IEBO	-10	nA	VEB=-3V, IC=0
DC current gain	hFE1	100		VCE=-10V, IC=-150mA
DC current gain	hFE1	300		VCE=-10V, IC=-150mA
DC current gain	hFE2	52		VCE=-10V, IC=-0.1mA
DC current gain	hFE3	32		VCE=-10V, IC=-500mA
Collector-emitter saturation voltage	VCE(sat)	-0.67	V	IC=-500mAIB=-50mA
Collector-emitter saturation voltage	VCE(sat)	-0.4	V	IC=-150mAIB=-15mA
Base-emitter saturation voltage	VBE(sat)	-1.2	V	IC=-500mAIB=-50mA
Base-emitter saturation voltage	VBE(sat)	-1	V	IC=-150mAIB=-15mA
Transition frequency	fT	200	MHz	VCE=-20V,IC=-50mA,f=100MHz
Delay time	td	10	ns	VCE=-30V, IC=-150mAIB1=-15mA
Rise time	tr	25	ns
Storage time	tS	225	ns	VCE=-6V,IC=-150mA IB1=IB2=-15mA
Fall time	tf	60	ns