Power MOSFET GOODWORK 50N10 N Channel 100V 50A Low Gate Charge for Industrial Robotics Applications
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Product Description
Product Overview
The 50N10 is an advanced N-Channel Power MOSFET designed for high-performance power management applications. It features ultra-low RDS(ON), low gate charge, and high current capability, making it ideal for demanding scenarios such as industrial automation, motor driving in electric vehicles and robotics, and current switching in DC/DC and AC/DC sub-systems. Its molded plastic package (TO-252) offers a robust and versatile mounting solution.
Product Attributes
- Case: Molded plastic
- Mounting Position: Any
- Molded Plastic Flammability Classification: UL 94V-0
- Compliance: EU RoHS 2011/65/EU directive
- Lead free
- Solder bath temperature: 275 maximum, 10s per JESD 22-B106
Technical Specifications
| Characteristics | Symbol | Value | Unit | Test Condition |
| MAIN CHARACTERISTICS | ||||
| ID | ID | 50 | A | |
| VDSS | VDSS | 100 | V | |
| RDS(ON)-typ (@VGS=10V) | RDS(ON)-typ | 14 | m | (@VGS=10V) |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDS | 100 | V | Tc=25C unless otherwise specified |
| Gate-Source Voltage | VGS | 20 | V | Tc=25C unless otherwise specified |
| Continue Drain Current | ID | 50 | A | Tc=25C unless otherwise specified |
| Pulsed Drain Current (Note1) | IDM | 200 | A | Tc=25C unless otherwise specified |
| Power Dissipation | PD | 82 | W | Tc=25C unless otherwise specified |
| Single Pulse Avalanche Energy (Note5) | EAS | 74 | mJ | Tc=25C unless otherwise specified |
| Operating Temperature Range | TJ | 150 | C | Tc=25C unless otherwise specified |
| Storage Temperature Range | TSTG | -55 to +150 | C | Tc=25C unless otherwise specified |
| Thermal Resistance, Junction to Case (Note 2) | RJC | 1.5 | C/W | Tc=25C unless otherwise specified |
| Thermal Resistance, Junction to Ambient | RJA | 39 | C/W | Tc=25C unless otherwise specified |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0 V, ID = 250 A |
| Drain-Source Leakage Current | IDSS | 1 | A | VDS = 100V, VGS = 0 V |
| Drain-Source Leakage Current | IDSS | 100 | A | VDS=100V,Tc=125C |
| Gate Leakage Current | IGSS | 100 | nA | VGS = 20 V, VDS = 0 V |
| Gate-Source Threshold Voltage | VGS(th) | 1.2 - 2.2 | V | VDS = VGS , ID = 250 A |
| Drain-Source On-State Resistance | RDS(on) | 14 - 20 | m | VGS = 10 V, ID =20A |
| Drain-Source On-State Resistance | RDS(on) | 18.6 - 25 | m | VGS = 4.5 V, ID =15A |
| Input Capacitance | Ciss | 992 | pF | VGS = 0 V, VDS = 50 V, f =1MHz |
| Output Capacitance | Coss | 330 | pF | VGS = 0 V, VDS = 50 V, f =1MHz |
| Reverse Transfer Capacitance | Crss | 19.2 | pF | VGS = 0 V, VDS = 50 V, f =1MHz |
| Turn-on Delay Time | td(ON) | 7 | ns | VDS=50V, ID=20A VGS=10V,RG=6.2 (Note3,4) |
| Rise Time | tr | 18 | ns | VDS=50V, ID=20A VGS=10V,RG=6.2 (Note3,4) |
| Turn-Off Delay Time | td(OFF) | 21 | ns | VDS=50V, ID=20A VGS=10V,RG=6.2 (Note3,4) |
| Fall Time | tf | 9 | ns | VDS=50V, ID=20A VGS=10V,RG=6.2 (Note3,4) |
| Total Gate Charge | QG | 19 | nC | VDS=50V,ID=20A, VGS=10V (Note3,4) |
| Gate to Source Charge | QGS | 4 | nC | VDS=50V,ID=20A, VGS=10V (Note3,4) |
| Gate to Drain Charge | QGD | 5 | nC | VDS=50V,ID=20A, VGS=10V (Note3,4) |
| Source-Drain Diode Characteristics | ||||
| Maximun Body-Diode Continuous Current (Note 2) | IS | 50 | A | Ta=25C unless otherwise specified |
| Maximun Body-Diode Pulsed Current | ISM | 200 | A | Ta=25C unless otherwise specified |
| Drain-Source Diode Forward Voltage | VSD | 1.2 | V | ISD = 20 A |
| Reverse Recovery Time | trr | 32 | ns | IS = IF, ISD=20A,VGS = 0 V, dI / dt = 100 A/s (Note3) |
| Reverse Recovery Charge | Qrr | 32 | C | IS = IF, ISD=20A,VGS = 0 V, dI / dt = 100 A/s (Note3) |
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