Surface Mount NPN Bipolar Transistor Guangdong Hottech MMBT3904 SOT23 Package Molded Plastic UL 94V0
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Product Description
Product Overview
The MMBT3904 is an NPN bipolar transistor designed for surface mount applications. It serves as a complementary device to the MMBT3906, offering reliable performance in a compact SOT-23 package. Constructed from molded plastic with UL 94V-0 flammability classification, this transistor is suitable for various electronic circuits requiring signal amplification and switching.
Product Attributes
- Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Product Name: MMBT3904
- Type: BIPOLAR TRANSISTOR (NPN)
- Package: SOT-23
- Case Material: Molded Plastic
- Flammability Classification: UL 94V-0
- Origin: China (implied by Shenzhen Hottech Electronics)
- Complementary to: MMBT3906
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 200 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 0.1 | uA | VCB=60V, IE=0 |
| Collector cut-off current | ICEX | 0.05 | uA | VCE=30V, VBE(OFF)=3V |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=5V, IC=0 |
| DC current gain (hFE1) | hFE1 | 100-300 | VCE=1V, IC=10mA | |
| DC current gain (hFE2) | hFE2 | 60 | VCE=1V, IC=50mA | |
| DC current gain (hFE3) | hFE3 | 30 | VCE=1V, IC=100mA | |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=50mAIB=5mA |
| Base-emitter saturation voltage | VBE(sat) | 0.95 | V | IC=50mAIB=5mA |
| Transition frequency | fT | 300 | MHz | VCE=20V,IC=10mA,f=100MHz |
| Delay time | td | 35 | ns | VCC=3V, VBE(OFF)=0.5V, IC=10mAIB1=1mA |
| Rise time | tr | 35 | ns | VCC=3V,IC=10mA IB1=IB2=1mA |
| Storage time | tS | 200 | ns | VCC=3V,IC=10mA IB1=IB2=1mA |
| Fall time | tf | 50 | ns | VCC=3V,IC=10mA IB1=IB2=1mA |
| Thermal Resistance Junction To Ambient | RJA | 625 | C/W |
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