Power MOSFET Guangdong Hottech HKTD50N06 N-Channel Device with 50 Amp Continuous Drain Current Rating
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Product Description
N-CHANNEL Power MOSFET
This N-CHANNEL Power MOSFET features a high-density cell design for ultra-low on-resistance and a fully characterized avalanche voltage and current capability. It is designed for efficient power management applications.
Product Attributes
- Brand: HOTTECH
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
- Case Material: Molded Plastic
- Flammability: UL 94V-0
- Marking: D50N06
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| FEATURES | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | VGS=10V | 50 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V | 17 | m | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=4.5V | 23 | m | ||
| MECHANICAL DATA | ||||||
| Case | TO-252 | |||||
| Weight | 0.33 | grams(approximate) | ||||
| MAXIMUM RATINGS (TA=25C unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | VGS=10V | 50 | A | ||
| Pulsed Drain Current | IDM | (Note 1) | 200 | A | ||
| Power Dissipation | PD | 45 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62 | C/W | |||
| Operating Junction and Storage Temperature | TJ,TSTG | -55 | +150 | C | ||
| Single Pulsed Avalanche Energy | EAS | (note 1) | 12 | mJ | ||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10s) | 260 | C | ||
| ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DS | VGS=0V,ID=250A | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate-Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.8 | 2.5 | V |
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 13.5 | 17 | m | |
| Drain-Source On-Resistance | RDS(ON) | VGS=4.5V,ID= 20A | 18 | 23 | m | |
| Forward Transconductance | gFS | VDS=5V,ID=20A | 10 | S | ||
| Input Capacitance | Ciss | VGS=0V VDS=25V f=1.0MHz | 1250 | pF | ||
| Output Capacitance | Coss | VGS=0V VDS=25V f=1.0MHz | 445 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V VDS=25V f=1.0MHz | 90 | pF | ||
| Turn-on Delay Time | td(on) | VDD=30V ID=50A RG=25 VGS=10V | 20 | ns | ||
| Turn-on Rise Time | tr | VDD=30V ID=50A RG=25 VGS=10V | 380 | ns | ||
| Turn-off Delay Time | td(off) | VDD=30V ID=50A RG=25 VGS=10V | 80 | ns | ||
| Turn-off Fall Time | tf | VDD=30V ID=50A RG=25 VGS=10V | 145 | ns | ||
| Total Gate Charge | Qg | VDS=48V,VGS=5V ID=50A | 25 | nC | ||
| Gate-Source Charge | Qgs | VDS=48V,VGS=5V ID=50A | 6 | nC | ||
| Gate-Drain Charge | Qgd | VDS=48V,VGS=5V ID=50A | 14.5 | nC | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | IS=50A,VGS=0V | 1.5 | V | ||
| Max. Forward Current | IS | 50 | A | |||
| Pulsed Drain-Source Diode Forward Current | ISM | 200 | A | |||
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