High Collector Current PNP Bipolar Transistor Guangdong Hottech S8550 in Surface Mount SOT23 Package

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Product Description

Product Overview

The S8550 is a PNP bipolar transistor designed for general-purpose applications. It offers excellent hFE linearity, high collector current capability, and is available in a surface-mount SOT-23 package. It serves as a complementary device to the S8050 transistor.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Origin: China
Case Material: Molded Plastic
UL Flammability Classification: 94V-0
Marking: 2TY (Rank L), H (Rank H), J (Rank J)

Technical Specifications

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Base Voltage	VCBO			-40	V
Collector-Emitter Voltage	VCEO			-25	V
Emitter-Base Voltage	VEBO			-5	V
Collector Current	IC			-500	mA
Collector Power Dissipation	PC			300	mW
Junction Temperature	TJ			150	C
Storage Temperature	TSTG	-55		+150	C
Collector-base breakdown voltage	V(BR)CBO	-40			V	IC=-100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-25			V	IC=-1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5			V	IE=-100uAIC=0
Collector cut-off current	ICBO		-0.1		uA	VCB=-40V, IE=0
Collector cut-off current	ICEO		-0.1		uA	VCE=-20V, IB=0
Emitter cut-off current	IEBO		-0.1		uA	VEB=-3V, IC=0
DC current gain	hFE1	120		400		VCE=-1V, IC=-50mA
DC current gain	hFE2	50				VCE=-1V, IC=-500mA
Collector-emitter saturation voltage	VCE(sat)			-0.6	V	IC=-500mAIB=-50mA
Base-emitter saturation voltage	VBE(sat)			-1.2	V	IC=-500mAIB=-50mA
Transition frequency	fT		150		MHz	VCE=-6V,IC=-20mA,f=30MHz
Thermal Resistance Junction To Ambient	RJA		417		C/W