Ultra high frequency transistor GUOXIN JIAPIN SEMICONDUCTOR FCS957 low noise NPN silicon epitaxial bipolar
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Product Description
Product Description
The FCS957 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin Semiconductor Co., Ltd. It offers high power gain and low noise characteristics. Its ultra-small SOT-323 package makes it ideal for high-density surface mount applications, primarily used in VHF and UHF low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Material: NPN Silicon Epitaxial Bipolar
- Package: SOT-323
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Condition |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Breakdown Voltage | VEBO | 1.5 | V | |||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | hFE | 90 | 150 | 250 | VCE=6V, IC=30mA | |
| Transition Frequency | fT | 8 | GHz | VCE=6V, IC=30mA, f=1GHz | ||
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V, IE=0mA, f=1MHz | ||
| Power Gain | | S21e | | 12 | dB | VCE=6V, IC=30mA, f=1GHz | ||
| Noise Figure | NF | 1.5 | dB | VCE=6V, IC=5mA, f=1GHz | ||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 |
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