High gain low noise transistor GUOXIN JIAPIN SEMICONDUCTOR FC3356 designed for ultra high frequency broadband amplifier
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Product Description
Product Overview
The FC3356 is an ultra-high frequency, low-noise NPN silicon epitaxial bipolar transistor manufactured by Guo Xin Jia Pin SEMICONDUTOR. It features high power gain, a low noise figure, a wide dynamic range, and ideal current characteristics. Packaged in a SOT-23/SC-59 surface-mount package, it is primarily used in VHF, UHF, and CATV high-frequency broadband low-noise amplifiers.
Product Attributes
- Brand: (Guo Xin Jia Pin SEMICONDUTOR)
- Origin: China
- Material: NPN Silicon Epitaxial Bipolar
- Packaging: SOT-23/SC-59
Technical Specifications
| Parameter | Symbol | Min | Typical | Max | Unit | Test Conditions |
| Collector-Base Breakdown Voltage | VCBO | 20 | V | IC=1.0A | ||
| Collector-Emitter Breakdown Voltage | VCEO | 12 | V | |||
| Emitter-Base Breakdown Voltage | VEBO | 2.5 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | PC | 200 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -65 | +150 | |||
| Collector-Base Leakage Current | ICBO | 0.1 | A | VCB=10V | ||
| Emitter-Base Leakage Current | IEBO | 0.1 | A | VEB=1V | ||
| DC Current Gain | HFE | 90 | 150 | 250 | VCE=10V,IC=20mA | |
| Gain Bandwidth Product | fT | 6 | 7 | GHz | VCE=10V,IC=20mA | |
| Output Feedback Capacitance | Cre | 0.65 | pF | VCB=10V,IE=0mA,f=1MHz | ||
| Power Gain | | S21e |2 | 11 | 11.5 | dB | VCE=10V,IC=20mA,f=1GHz | |
| Noise Figure | NF | 1.3 | 1.8 | dB | VCE=10V,IC=7mA,f=1GHz |
| HFE Bin | Product Number | Standard Packaging | Sorting |
| B | FC3356 | 3K/Reel | 90-130 |
| C | FC3356 | 3K/Reel | 120-180 |
| D | FC3356 | 3K/Reel | 170-250 |
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