Guangdong Hottech BC81716 NPN Transistor Offering Switching and Amplification in Electronic Circuits

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Product Description

BC817 NPN Bipolar Transistor

The BC817 is an NPN bipolar transistor designed for surface mount applications. It offers high collector current, low collector-emitter saturation voltage, and high current gain, making it a complementary part to the BC807. This device is suitable for various electronic circuits requiring efficient amplification and switching.

Product Attributes

Brand: HOTTECH
Origin: GUANGDONG
Package: SOT-23
Material: Molded Plastic
Flammability Classification: UL 94V-0

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	800	mA
Collector Power Dissipation	PC	625	mW
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	50	V	IC=10uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	45	V	IC=10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=1uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=50V, IE=0
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain (hFE1)	hFE1	100-600		VCE=1V, IC=100mA
DC current gain (hFE2)	hFE2	40		VCE=1V, IC=500mA
Collector-emitter saturation voltage	VCE(sat)	0.5	V	IC=800mAIB=80mA
Base-emitter saturation voltage	VBE(sat)	1.2	V	IC=800mAIB=80mA
Base-emitter voltage	VBE	1.2	V	VCE=1V,IC=800mA
Transition frequency	fT	100	MHz	VCE=5V,IC=10mA,f=30MHz
Collector output capacitance	Cob	10	pF	VCE=10V, f=1MHz