NPN bipolar transistor Guangdong Hottech MMBT2222A epitaxial planar die in SOT23 package for general
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Product Description
Product Overview
The MMBT2222A is a complementary NPN bipolar transistor designed for surface mount applications. It features an epitaxial planar die construction and is housed in a SOT-23 package. This device is suitable for general-purpose amplification and switching applications.
Product Attributes
- Brand: HOTTECH (implied by copyright and email)
- Complementary to: MMBT2907A
- Construction: Epitaxial planar die
- Package: SOT-23
- Case Material: Molded Plastic
- UL Flammability Classification: 94V-0
- Origin: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | 75 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 600 | mA | |
| Collector Power Dissipation | PC | 300 | mW | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | 75 | V | IC=10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC=10mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10uAIC=0 |
| Collector cut-off current | ICBO | 0.01 | uA | VCB=60V, IE=0 |
| Collector cut-off current | ICEX | 0.01 | uA | VCE=30V, VBE(OFF)=3V |
| Emitter cut-off current | IEBO | 0.1 | uA | VEB=3V, IC=0 |
| DC current gain (hFE1) | hFE1 | 100-300 | VCE=10V, IC=150mA | |
| DC current gain (hFE2) | hFE2 | 40 | VCE=10V, IC=0.1mA | |
| DC current gain (hFE3) | hFE3 | 42 | VCE=10V, IC=500mA | |
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=500mAIB=50mA |
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=150mAIB=15mA |
| Base-emitter saturation voltage | VBE(sat) | 2.0 | V | IC=500mAIB=50mA |
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=150mAIB=15mA |
| Transition frequency | fT | 150 | MHz | VCE=20V,IC=20mA,f=100MHz |
| Delay time | td | 10 | ns | VCC=30V, VBE(OFF)=0.5V, IC=150mAIB1=15mA |
| Rise time | tr | 25 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Storage time | tS | 225 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
| Fall time | tf | 60 | ns | VCC=30V,IC=150mA IB1=IB2=15mA |
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