High Collector Current NPN Transistor Guangdong Hottech BC846A Plastic Encapsulated for Electronics

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Product Description

Product Overview

These plastic-encapsulated transistors are designed for general AF applications, offering high collector current, high current gain, and low collector-emitter saturation voltage. They are suitable for various electronic circuits requiring amplification.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Origin: China
Encapsulation: Plastic
Transistor Type: NPN

Technical Specifications

Parameter	Symbol	Test Conditions	BC846	BC847	BC848	Unit
Collector-Base Voltage (Breakdown)	VCBO	IC= 10A, IE=0	80	50	30	V
Collector-Emitter Voltage (Breakdown)	VCEO	IC= 10mA, IB=0	65	45	30	V
Emitter-Base Voltage (Breakdown)	VEBO	IE= 10A, IC=0	6			V
Collector Current - Continuous	IC		0.1			A
Collector Power Dissipation	PC	TA=25 ℃	0.2			W
Junction Temperature	TJ		150			℃
Storage Temperature	Tstg		-55 to +150			℃
Collector Cut-off Current	ICBO	VCB=70 V, IE=0 (BC846) VCB=50 V, IE=0 (BC847) VCB=30 V, IE=0 (BC848)	0.1			μA
Collector Cut-off Current	ICEO	VCE=60 V, IB=0 (BC846) VCE=45 V, IB=0 (BC847) VCE=30 V, IB=0 (BC848)	0.1			μA
Emitter Cut-off Current	IEBO	VEB=5 V, IC=0	0.1			μA
DC Current Gain	hFE	VCE= 5V, IC= 2mA	110-200 (BC846A/B, 847A/B, 848A/B) 420-800 (BC847C, 848C)	110-200 (BC846A/B, 847A/B, 848A/B) 420-800 (BC847C, 848C)	110-200 (BC846A/B, 847A/B, 848A/B) 420-800 (BC847C, 848C)
Collector-Emitter Saturation Voltage	VCE(sat)	IC=100mA, IB= 5mA	0.5			V
Base-Emitter Saturation Voltage	VBE(sat)	IC=100mA, IB= 5mA	1.1			V
Transition Frequency	fT	VCE= 5 V, IC=10mA, f=100MHz	100			MHz
Collector Output Capacitance	Cob	VCB=10V,f=1MHz	4.5			pF