power switching component GOODWORK 20N06 N channel Power Trench MOSFET with tested electrical limits
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Delivery Time:
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Product Description
Product Overview
The 20N06 is an N-channel Power Trench MOSFET designed for efficient power management. It offers excellent RDS(ON) and low gate charge, making it suitable for load switching, PWM applications, and general power management tasks. This MOSFET is 100% UIS and Vds tested, and is Halogen-free and RoHS-compliant.
Product Attributes
- Certifications: Halogen-free; RoHS-compliant
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | 60 | V | ||||
| Gate-to-Source Voltage | ±20 | V | ||||
| Pulsed Drain Current | (1) | 20 | A | |||
| Continuous Drain Current | TC = 25°C | 60 | A | |||
| Continuous Drain Current | TC = 100°C | 42 | A | |||
| IDM | 79 | A | ||||
| EAS | Single Pulsed Avalanche Energy (2) | 24 | mJ | |||
| PD | Power Dissipation | 37 | W | |||
| TC = 25°C | 15 | W | ||||
| TC = 100°C | -55 to 150 | °C | ||||
| TJ, TSTG | Junction & Storage Temperature Range | °C | ||||
| Thermal Characteristics | ||||||
| RθJA | Thermal Resistance, Junction to Ambient(3) | 42 | °C/W | |||
| RθJC | Thermal Resistance, Junction to Case | 3.4 | °C/W | |||
| Off Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | 60 | - | - | V | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | - | 1.0 | mA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250mA | 1.1 | 1.6 | 2.5 | V |
| Rds(ON) | Static Drain-Source ON-Resistance(4) | VGS = 10V, ID = 10A | - | 26 | 33 | mΩ |
| Rds(ON) | Static Drain-Source ON-Resistance(4) | VGS = 4.5V, ID = 5A | - | 32 | 45 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 848 | 1187 | pF |
| Coss | Output Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 40 | 56 | pF |
| Crss | Reverse Transfer Capacitance | VGS = 0V, VDS = 30V, f = 1MHz | - | 34 | 47 | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V | - | 17 | 24 | nC |
| Qgs | Gate Source Charge | VDS = 30V, ID = 10A | - | - | 4.5 | nC |
| Qgd | Gate Drain("Miller") Charge | VDS = 30V, ID = 10A | - | - | 4.5 | nC |
| td(on) | Turn-On Delay Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 6.7 | - | ns |
| tr | Turn-On Rise Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 15 | - | ns |
| td(off) | Turn-Off Delay Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 24 | - | ns |
| tf | Turn-Off Fall Time | VGS = 10V, VDD = 30V, ID = 10A, RGEN = 3Ω | - | 2.7 | - | ns |
| Body Diode Characteristics | ||||||
| IS | Maximum Continuous Body Diode Forward Current | - | 20 | A | ||
| ISM | Maximum Pulsed Body Diode Forward Current | - | 79 | A | ||
| VSD | Body Diode Forward Voltage | VGS = 0V, IS = 10A | - | 1.2 | - | V |
| trr | Body Diode Reverse Recovery Time | IF = 10A, di/dt = 100A/us | 13 | 19 | 25 | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 10A, di/dt = 100A/us | - | 19 | - | nC |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina