NPN Bipolar Transistor Guangdong Hottech MMBT5551 600mA Collector Current Surface Mount SOT23 Package

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Product Description

MMBT5551 NPN Bipolar Transistor

The MMBT5551 is an NPN bipolar transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401 and comes in a surface-mount SOT-23 package.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Model: MMBT5551
Type: NPN Bipolar Transistor
Complementary to: MMBT5401
Package: SOT-23
Case Material: Molded Plastic
UL Flammability Classification Rating: 94V-0
Weight: 0.008 grams (approximate)

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	180	V	TA = 25C unless otherwise noted
Collector-Emitter Voltage	VCEO	160	V	TA = 25C unless otherwise noted
Emitter-Base Voltage	VEBO	6	V	TA = 25C unless otherwise noted
Collector Current	IC	600	mA	TA = 25C unless otherwise noted
Collector Power Dissipation	PC	300	mW	TA = 25C unless otherwise noted
Thermal Resistance Junction to Ambient	RJA	416	C/W	TA = 25C unless otherwise noted
Junction Temperature	TJ	150	C	TA = 25C unless otherwise noted
Storage Temperature	TSTG	-55 ~+150	C	TA = 25C unless otherwise noted
Collector-base breakdown voltage	V(BR)CBO	180	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	160	V	IC=1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE=10uAIC=0
Collector cut-off current	ICBO	0.05	uA	VCB=120V, IE=0
Emitter cut-off current	IEBO	0.05	uA	VEB=4V, IC=0
DC current gain (hFE1)	hFE1	80	-	VCE=5V, IC=1mA
DC current gain (hFE2)	hFE2	100 - 300	-	VCE=5V, IC=10mA
DC current gain (hFE3)	hFE3	50	-	VCE=5V, IC=50mA
Collector-emitter saturation voltage (VCE(sat))	VCE(sat)	0.15	V	IC=10mAIB=1mA
Collector-emitter saturation voltage (VCE(sat))	VCE(sat)	0.2	V	IC=50mAIB=5mA
Base-emitter saturation voltage (VBE(sat))	VBE(sat)	1	V	IC=10mAIB=1mA
Base-emitter saturation voltage (VBE(sat))	VBE(sat)	1	V	IC=50mAIB=5mA
Transition frequency	fT	100 - 300	MHz	VCE=10V,IC=10mA,f=100MHz
Collector output capacitance	Cob	6	pF	VCE=10V, IE=0, f=1MHz