Semiconductor Transistor High Diode BC807 With SOT23 Package And Complementary BC817 NPN Transistor
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Product Description
Product Overview
The BC807 is a high diode semiconductor transistor in a SOT-23 package. It offers high collector current, high current gain, and low collector-emitter saturation voltage. It is a complementary type to the BC817 (NPN) transistor.
Product Attributes
- Brand: High Diode Semiconductor
- Package Type: SOT-23
- Material: Plastic-Encapsulate Transistors
- Complementary Type: BC817 (NPN)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit | Rank | Marking |
|---|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | IC= -10A, IE=0 | -50 | V | ||||
| Collector-Emitter Voltage | VCEO | IC= -10mA, IB=0 | -45 | V | ||||
| Emitter-Base Voltage | VEBO | IE= -1A, IC=0 | -5 | V | ||||
| Collector Cut-off Current | ICBO | VCB= -45 V , IE=0 | 0.1 | A | ||||
| Emitter Cut-off Current | IEBO | VEB= -4V, IC=0 | 0.1 | A | ||||
| DC Current Gain | hFE(1) | VCE= -1V, IC=-100mA | 100 | 600 | BC807-16 | 5A | ||
| DC Current Gain | hFE(2) | VCE=-1V, IC=-500mA | 40 | BC807-25 | 5B | |||
| DC Current Gain | hFE | VCE= -1V, IC=-100mA | BC807-40 | 5C | ||||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-500mA, IB= 50mA | 0.7 | V | ||||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-500mA, IB=-50mA | 1.2 | V | ||||
| Transition Frequency | fT | VCE=-5 V, IC=-10mA f=100MHz | 100 | MHz | ||||
| Collector Power Dissipation | PC | 300 | mW | |||||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||||
| Junction Temperature | Tj | 150 | ||||||
| Storage Temperature | Tstg | -55 | +150 |
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