Surface Mount NPN Transistor Guangdong Hottech SS8050 Suitable for Electronic Circuit Applications

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Product Description

SS8050 BIPOLAR TRANSISTOR (NPN)

The SS8050 is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity and high collector current capabilities, serving as a complementary component to the SS8550. This device is suitable for various electronic circuits requiring reliable transistor performance.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
Complementary to: SS8550
Case Material: Molded Plastic
UL Flammability Classification: 94V-0

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1500	mA
Collector Power Dissipation	PC	300	mW	TA = 25C
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	40	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	25	V	IC=0.1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=100uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=40V, IE=0
Collector cut-off current	ICEO	0.1	uA	VCE=20V, IB=0
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain	hFE1	120-400		VCE=1V, IC=100mA
DC current gain	hFE2	40		VCE=1V, IC=800mA
Collector-emitter saturation voltage	VCE(sat)	0.6	V	IC=500mAIB=50mA
Base-emitter saturation voltage	VBE(sat)	1.2	V	IC=500mAIB=50mA
Transition frequency	fT	100	MHz	VCE=10V,IC=50mA, f=30MHz

SOT-23 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	0.900	1.150	0.354	0.453
A1	0.000	0.100	0.000	0.039
A2	0.900	1.050	0.354	0.413
b	0.300	0.500	0.118	0.197
c	0.080	1.150	0.031	0.453
D	2.900	3.100	1.142	1.220
E	1.200	1.400	0.472	0.551
E1	2.250	2.550	0.886	1.004
e	0.95REF		0.374REF
e1	1.800	2.000	0.709	0.787