NPN transistor Guangdong Hottech BC848C plastic package designed for audio frequency circuits general purpose

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Product Description

Product Overview

General-purpose NPN transistors in a plastic-encapsulate package, designed for AF applications. These transistors offer high collector current, high current gain, and low collector-emitter saturation voltage, making them suitable for various audio frequency circuits.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Origin: China (implied by brand)
Encapsulation: Plastic
Package: SOT-23
Transistor Type: NPN

Technical Specifications

Model	Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
BC846	Collector-Base Voltage	VCBO				80	V
	Collector-Emitter Voltage	VCEO				65	V
	Emitter-Base Voltage	VEBO					6	V
	Collector Current -Continuous	IC					0.1	A
	Collector Power Dissipation	PC					0.2	W
	Junction Temperature	TJ					150	C
	Storage Temperature	Tstg			-55		+150	C
	Collector-base breakdown voltage	VCBO	IC= 10A, IE=0				80	V
	Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0				65	V
	Collector cut-off current	ICBO	VCB=70 V , IE=0			0.1		A
	Collector cut-off current	ICEO	VCE=60 V , IB=0			0.1		A
BC847	Collector-Base Voltage	VCBO				50	V
	Collector-Emitter Voltage	VCEO				45	V
	Emitter-Base Voltage	VEBO					6	V
	Collector Current -Continuous	IC					0.1	A
	Collector Power Dissipation	PC					0.2	W
	Junction Temperature	TJ					150	C
	Storage Temperature	Tstg			-55		+150	C
	Collector-base breakdown voltage	VCBO	IC= 10A, IE=0				50	V
	Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0				45	V
	Collector cut-off current	ICBO	VCB=50 V , IE=0			0.1		A
	Collector cut-off current	ICEO	VCE=45 V , IB=0			0.1		A
BC848	Collector-Base Voltage	VCBO				30	V
	Collector-Emitter Voltage	VCEO				30	V
	Emitter-Base Voltage	VEBO					6	V
	Collector Current -Continuous	IC					0.1	A
	Collector Power Dissipation	PC					0.2	W
	Junction Temperature	TJ					150	C
	Storage Temperature	Tstg			-55		+150	C
	Collector-base breakdown voltage	VCBO	IC= 10A, IE=0				30	V
	Collector-emitter breakdown voltage	VCEO	IC= 10mA, IB=0				30	V
	Collector cut-off current	ICBO	VCB=30 V , IE=0			0.1		A
	Collector cut-off current	ICEO	VCE=30 V , IB=0			0.1		A
All Models	Emitter cut-off current	IEBO	VEB=5 V , IC=0			0.1	A
	Collector-emitter saturation voltage	VCE(sat)	IC=100mA, IB= 5mA			0.5	V
	Base-emitter saturation voltage	VBE(sat)	IC=100mA, IB= 5mA			1.1	V
	Transition frequency	fT	VCE= 5 V, IC= 10mA f=100MHz			100	MHz
BC846A,847A,848A	DC current gain	hFE	VCE= 5V, IC= 2mA	110
BC846B,847B,848B	DC current gain	hFE	VCE= 5V, IC= 2mA	200
BC847C,BC848C	DC current gain	hFE	VCE= 5V, IC= 2mA	420
All Models	Collector output capacitance	Cob	VCB=10V,f=1MHz			4.5	pF