General Purpose NPN Transistor High Diode SS8050 in SOT23 Package with 25V Collector Emitter Voltage

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Product Description

Product Overview

The Y1 SS8050 is a high diode semiconductor NPN transistor in a SOT-23 plastic-encapsulated package. It is designed for general-purpose applications and is complementary to the SS8550 transistor. Key features include a collector current of 1.5A and a collector-emitter voltage of 25V.

Product Attributes

Brand: High Diode Semiconductor
Package Type: SOT-23
Transistor Type: NPN
Complementary to: SS8550

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	V				40	V
Collector-Emitter Voltage	VCEO				25	V
Emitter-Base Voltage	VEBO				5	V
Collector Current	IC				1.5	A
Collector Power Dissipation	PC				300	mW
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	IC= 100A, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0		0.1		A
Collector cut-off current	ICEO	VCE=20V, IE=0		0.1		A
Emitter cut-off current	IEBO	VEB= 5V, IC=0		0.1		A
DC current gain (1)	hFE(1)	VCE=1V, IC= 100mA	120		400
DC current gain (2)	hFE(2)	VCE=1V, IC= 800mA		40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA, f=30MHz		100		MHz