NPN Bipolar Transistor Guangdong Hottech S8050 Suitable for Various Electronic Applications and Circuits

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The S8050 is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, high collector current capability, and is complementary to the S8550 transistor. This device is suitable for various electronic circuits requiring a general-purpose NPN transistor.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Complementary to: S8550
Case Material: Molded Plastic
UL Flammability Classification Rating: 94V-0
Marking: J3Y

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	500	mA
Collector Power Dissipation	PC	300	mW
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~ +150	C
Collector-base breakdown voltage	V(BR)CBO	40	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	25	V	IC=1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=100uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=40V, IE=0
Collector cut-off current	ICEO	0.1	uA	VCE=20V, IB=0
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain (hFE1)	hFE1	120-400		VCE=1V, IC=50mA
DC current gain (hFE2)	hFE2	50		VCE=1V, IC=500mA
Collector-emitter saturation voltage	VCE(sat)	0.6	V	IC=500mAIB=50mA
Base-emitter saturation voltage	VBE(sat)	1.2	V	IC=500mAIB=50mA
Transition frequency	fT	150	MHz	VCE=6V, IC=20mA, f=30MHz