NPN Bipolar Transistor Guangdong Hottech C945 Designed for Amplification and Switching Applications

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Product Description

Product Overview

The C945 is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, low noise, and is complementary to the A733 transistor. This device is suitable for various electronic circuits requiring reliable amplification and switching.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Product Type: BIPOLAR TRANSISTOR (NPN)
Case Material: Molded Plastic
UL Flammability Classification: 94V-0
Marking: CR

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	60	V
Collector-Emitter Voltage	VCEO	50	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	150	mA
Collector Power Dissipation	PC	200	mW
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	60	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	50	V	IC=1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=100uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=60V, IE=0
Collector cut-off current	ICER	0.1	uA	VCE=55V, R=10M
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain	hFE1	130		VCE=6V, IC=1mA
DC current gain	hFE1	400		VCE=6V, IC=1mA
DC current gain	hFE2	40		VCE=6V, IC=0.1mA
Collector-emitter saturation voltage	VCE(sat)	0.3	V	IC=100mAIB=10mA
Base-emitter saturation voltage	VBE(sat)	1	V	IC=100mAIB=10mA
Transition frequency	fT	150	MHz	VCE=6V, IC=10mA, f=30MHz
Collector output capacitance	Cob	3.0	pF	VCE=10V, IE=0, f=1MHz
Noise figure	NF	4	dB	VCE=6V, IC=0.1mA,Rg=10k f=1KMHz
Noise figure	NF	10	dB	VCE=6V, IC=0.1mA,Rg=10k f=1KMHz