Transistor SOT23 Package Guangdong Hottech BC857C Plastic Encapsulate Ideal for AF Amplifier Circuits

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Product Description

Product Overview

Plastic-encapsulate transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in SOT-23 package.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Origin: China (implied by brand)
Material: Plastic Encapsulate
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test conditions	BC856	BC857	BC858	Unit
Collector-Base Voltage	VCBO		-80	-50	-30	V
Collector-Emitter Voltage	VCEO		-65	-45	-30	V
Emitter-Base Voltage	VEBO		-5	-5	-5	V
Collector Current - Continuous	IC		-0.1	-0.1	-0.1	A
Collector Power Dissipation	PC		0.2	0.2	0.2	W
Junction Temperature	TJ		150	150	150
Storage Temperature	Tstg		-55 to +150	-55 to +150	-55 to +150
Collector-base breakdown voltage	VCBO	IC= -10A, IE=0	-80	-50	-30	V
Collector-emitter breakdown voltage	VCEO	IC= -10mA, IB=0	-65	-45	-30	V
Emitter-base breakdown voltage	VEBO	IE= -1A, IC=0	-5	-5	-5	V
Collector cut-off current	ICBO	VCB= -70 V , IE=0	-0.1			A
Collector cut-off current	ICBO	VCB= -45 V , IE=0		-0.1		A
Collector cut-off current	ICBO	VCB= -25 V , IE=0			-0.1	A
Collector cut-off current	ICEO	VCE= -60 V , IB=0	-0.1			A
Collector cut-off current	ICEO	VCE= -40 V , IB=0		-0.1		A
Collector cut-off current	ICEO	VCE= -25 V , IB=0			-0.1	A
Emitter cut-off current	IEBO	VEB= -5 V , IC=0	-0.1	-0.1	-0.1	A
DC current gain	hFE	VCE= -5V, IC= -2mA	125-250	220-475	420-800
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB= -5 mA	-0.5	-0.5	-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= -100mA, IB= -5mA	-1.1	-1.1	-1.1	V
Transition frequency	fT	VCE= -5 V, IC= -10mA, f=100MHz	100	100	100	MHz
Collector capacitance	Cob	VCB=-10V, f=1MHz	4.5	4.5	4.5	pF