NPN Bipolar Transistor Guangdong Hottech PXT8050 SOT89 Package Designed for Electronic Switching

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Product Description

Product Overview

The PXT8050 is an NPN bipolar transistor designed for surface mount applications. It is complementary to the PXT8550 and comes in a SOT-89 package. This device is suitable for various electronic circuits requiring amplification or switching functions.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Origin: China
Case Material: Molded Plastic
UL Flammability Classification: 94V-0
Marking: Y1

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
MAXIMUM RATINGS
Collector-Base Voltage	VCBO	40	V
Collector-Emitter Voltage	VCEO	25	V
Emitter-Base Voltage	VEBO	5	V
Collector Current	IC	1.5	A
Collector Power Dissipation	PC	500	mW	(TA = 25C unless otherwise noted)
Thermal Resistance Junction To Ambient	RJA	250	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
ELECTRICAL CHARACTERISTICS
Collector-base breakdown voltage	V(BR)CBO	40	V	IC=100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	25	V	IC=0.1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	5	V	IE=100uAIC=0
Collector cut-off current	ICBO	0.1	uA	VCB=40V, IE=0
Collector cut-off current	ICEO	0.1	uA	VCE=20V, IE=0
Emitter cut-off current	IEBO	0.1	uA	VEB=5V, IC=0
DC current gain	hFE1	85		VCE=1V, IC=100mA
DC current gain	hFE2	40		VCE=1V, IC=800mA
Collector-emitter saturation voltage	VCE(sat)	0.5	V	IC=800mAIB=80mA
Base-emitter saturation voltage	VBE(sat)	1.2	V	IC=800mAIB=80mA
Base-emitter voltage	VBE	1	V	VCE=1V, IC=10mA
Base-emitter positive favor voltage	VBEF	1.55	V	IB=1A
Transition frequency	fT	100	MHz	VCE=10V,IC=50mA, f=30MHz
Collector output capacitance	Cob	15	pF	VCB=10V, IE=0, f=1MHz