Low saturation voltage transistor Guangdong Hottech 2SC2873 with high speed switching and compact flat package design

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Product Description

Product Overview

The 2SC2873 is a plastic-encapsulated NPN transistor featuring a small flat package, low saturation voltage (VCE(sat) = -0.5V), and high-speed switching time. It offers a collector power dissipation (PC) of 1.0 to 2.0W and is complementary to the 2SA1213. This transistor is suitable for applications requiring efficient power handling and fast switching.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Origin: GUANGDONG
Material: Plastic-Encapsulate
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO				50	V
Collector-Emitter Voltage	VCEO				50	V
Emitter-Base Voltage	VEBO				5	V
Collector Current -Continuous	IC				2	A
Collector Power dissipation	PC	(1)			1	W
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55	to	+150
Collector-base breakdown voltage	V(BR)CBO	IC=100A,IE=0	50			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA,IB=0	50			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100A,IC=0	5			V
Collector cut-off current	ICBO	VCB=50V,IE=0			0.1	A
Emitter cut-off current	IEBO	VEB=5V,IC=0			0.1	A
DC current gain	hFE(1)	VCE=2V, IC=0.5A	70		240
DC current gain	hFE(2)	VCE=2V, IC=2A		20
Collector-emitter saturation voltage	VCE(sat)	IC=1A,IB=50mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=1A,IB=50mA			1.2	V
Transition frequency	fT	VCE=2V,IC=0.5A		120		MHz
Collector output capacitance	Cob	VCB=10V, IE=0, f=1MHz			30	pF