NPN Bipolar Transistor Guangdong Hottech BC847BW in SOT323 Package for Electronic Circuit Designs

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Product Description

Product Overview

The BC847W is an NPN bipolar transistor designed for surface mount applications. It offers excellent hFE linearity, high collector current capability, and is complementary to the BC857W. This device is housed in a SOT-323 package.

Product Attributes

Brand: SHENZHEN HOTTECH ELECTRONICS CO.,LTD
Origin: China (implied by company name and address)
Material: Molded Plastic (UL flammability Classification Rating: 94V-0)
Device Type: Bipolar Transistor (NPN)
Package: SOT-323

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	50	V
Collector-Emitter Voltage	VCEO	45	V
Emitter-Base Voltage	VEBO	6	V
Collector Current	IC	100	mA
Collector Power Dissipation	PC	150	mW
Thermal Resistance Junction To Ambient	RJA	833	C/W
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	50	V	IC=10uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	45	V	IC=10mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	6	V	IE=1uAIC=0
Collector cut-off current	ICBO	15	nA	VCB=30V, IE=0
DC current gain	hFE	110		VCE=5V, IC=2mA
DC current gain	hFE	800		VCE=5V, IC=10uA
Collector-emitter saturation voltage	VCE(sat)	0.25	V	IC=10mAIB=0.5mA
Collector-emitter saturation voltage	VCE(sat)	0.6	V	IC=100mAIB=5mA
Base-emitter saturation voltage	VBE(sat)	0.7	V	IC=10mAIB=0.5mA
Base-emitter saturation voltage	VBE(sat)	0.9	V	IC=100mAIB=5mA
Base-emitter voltage	VBE(ON)	0.58	0.66	0.7	V	VCE=5V, IC=2mA
Base-emitter voltage	VBE(ON)	0.77	V	VCE=5V, IC=10mA
Transition frequency	fT	100	MHz	VCE=5V,IC=10mA,f=100MHz
Collector output capacitance	Cob	8	pF	VCB=10V, f=1MHz
Noise figure	NF	10	dB	VCE=5V, IC=0.2mA,RS=2k f=1KMHz,BW=200Hz