Electronic circuit PNP transistor Guangdong Hottech MMBTA94 with high breakdown voltage and operation

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Product Description

MMBTA94 BIPOLAR TRANSISTOR (PNP)

The MMBTA94 is a PNP bipolar transistor designed for surface mount applications. It offers high breakdown voltage and low collector-emitter saturation voltage, making it a complementary part to the MMBTA44. This device is suitable for various electronic circuits requiring a PNP transistor with these characteristics.

Product Attributes

Brand: HKT (SHENZHEN HOTTECH ELECTRONICS CO.,LTD)
Complementary to: MMBTA44
Case Material: Molded Plastic
UL Flammability Classification Rating: 94V-0
Package: SOT-23

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Maximum Ratings	VCBO	-400	V
	VCEO	-400	V
	VEBO	-5	V
	IC (continuous)	-200	mA
	IC (peak)	-300	mA
	PC	350	mW	TA = 25C unless otherwise noted
	RJA	357	C/W	Junction To Ambient
Operating Conditions	TJ	150	C	Junction Temperature
	TSTG	-55 ~+150	C	Storage Temperature
	TA	25	C	Ambient Temperature (unless otherwise noted)
Electrical Characteristics	V(BR)CBO	-400	V	IC=100uA, IE=0
	V(BR)CEO	-400	V	IC=1mA, IB=0
	V(BR)EBO	-5	V	IE=10uA, IC=0
	ICBO	-0.1	uA	VCB=-400V, IE=0
	ICEO	-5	uA	VCE=-400V, IB=0
	IEBO	-0.1	uA	VEB=-4V, IC=0
DC Current Gain	hFE1	80 - 300		VCE=-10V, IC=-10mA
	hFE2	70		VCE=-10V, IC=-1mA
	hFE3	40		VCE=-10V, IC=-100mA
	hFE4	40		VCE=-10V, IC=-50mA
Saturation Voltage	VCE(sat)	-0.2	V	IC=-10mA, IB=-1mA
Saturation Voltage	VCE(sat)	-0.3	V	IC=-50mA, IB=-5mA
Base-Emitter Saturation Voltage	VBE(sat)	-0.75	V	IC=-10mA, IB=-1mA
Transition Frequency	fT	50	MHz	VCE=-20V,IC=-10mA,f=30MHz

SOT-23 Package Outline Dimensions

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	0.900	1.150	0.035	0.045
A1	0.000	0.100	0.000	0.004
A2	0.900	1.050	0.035	0.041
b	0.300	0.500	0.012	0.020
c	0.080	0.150	0.003	0.006
D	2.800	3.000	0.110	0.118
E	1.200	1.400	0.047	0.055
E1	2.250	2.550	0.089	0.100
e		0.950 TYP		0.037 TYP
e1	1.800	2.000	0.071	0.079
L		0.550 REF		0.022 REF
L1	0.300	0.500	0.012	0.020
	0	8	0	8