High Current PNP Bipolar Transistor Guangdong Hottech BC869-25 with SOT-89 Package and Molded Plastic Case

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Product Description

BC869 PNP Bipolar Transistor

The BC869 is a PNP bipolar transistor designed for surface mount applications. It offers high current and low voltage capabilities, making it suitable for various electronic circuits. This device is complementary to the BC868.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO.,LTD
Origin: China
Package: SOT-89
Case Material: Molded Plastic
UL Flammability Classification: 94V-0

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Collector-Base Voltage	VCBO	-32	V
Collector-Emitter Voltage	VCEO	-20	V
Emitter-Base Voltage	VEBO	-5	V
Collector Current	IC	-1	A
Collector Power Dissipation	PC	500	mW
Junction Temperature	TJ	150	C
Storage Temperature	TSTG	-55 ~+150	C
Collector-base breakdown voltage	V(BR)CBO	-32	V	IC=-100uAIE=0
Collector-emitter breakdown voltage	V(BR)CEO	-20	V	IC=-1mAIB=0
Emitter-base breakdown voltage	V(BR)EBO	-5	V	IE=-100uAIC=0
Collector cut-off current	ICBO	-0.1	uA	VCB=-25V, IE=0
Emitter cut-off current	IEBO	-0.1	uA	VEB=-5V, IC=0
DC current gain (hFE1)	hFE1	50		VCE=-10V, IC=-5mA
DC current gain (hFE2)	hFE2	100	375	VCE=-1V, IC=-0.5A
DC current gain (hFE3)	hFE3	60		VCE=-1V, IC=-1A
Collector-emitter saturation voltage	VCE(sat)	-0.5	V	IC=-1AIB=-0.1A
Base-emitter voltage	VBE	-1	V	VCE=-1V, IC=-1A
Base-emitter voltage	VBE	-0.62	V	VCE=-10V, IC=-5mA
Transition frequency	fT	40	MHz	VCE=-5V,IC=-10mA,f=100MHz