TO-92 Plastic Encapsulate Transistor HL Haolin Elec 2N5551 C NPN General Purpose with 180V Collector Base Voltage

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Product Description

TO-92 Plastic-Encapsulate Transistors 2N5551 TRANSISTOR NPN

The 2N5551 is an NPN transistor designed for general-purpose applications. It features a power dissipation of 0.625 W (Tamb=25), a collector current of 0.6 A, and a collector-base voltage of 180 V. The operating and storage junction temperature range is -55 to +150.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Origin: China
Material: Plastic-Encapsulate
Package Type: TO-92

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	TYP	MAX	UNIT
Power dissipation	PCM	Tamb=25			0.625	W
Collector current	ICM				0.6	A
Collector-base voltage	V(BR)CBO				180	V
Operating and storage junction temperature range	TJTstg		-55		+150
Collector-base breakdown voltage	V(BR)CBO	Ic= 100 AIE=0	180			V
Collector-emitter breakdown voltage	V(BR)CEO	Ic= 100uA IB=0	160			V
Emitter-base breakdown voltage	V(BR)EBO	IE= 100A IC=0	6			V
Collector cut-off current	ICBO	VCB= 180V IE=0			0.1	A
Emitter cut-off current	IEBO	VEB= 4 V IC=0			0.1	A
DC current gain	hFE1	VCE= 5 V, IC= 1 mA	80
DC current gain	hFE2	VCE= 5 V, IC = 10 mA	80	250
DC current gain	hFE3	VCE= 5 V, IC= 50 mA	50
Collector-emitter saturation voltage	VCEsat	IC= 50 mA, IB= 5 mA		0.5		V
Base-emitter saturation voltage	VBEsat	IC= 50 mA, IB= 5 mA		1		V
Transition frequency	fT	VCE= 5 V,IC= 10 mA,,f =30MHz	80			MHz

hFE Classification

Rank	Range
A	80-160
B	120-180
C	150-250

TO-92 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.400	4.700	0.173	0.185
D1	3.430	4.700	0.135	0.185
E	4.300	2.640	0.169	0.104
e	2.440	14.100	0.096	0.555
e1	14.100	14.500	0.555	0.571
L	0.000	1.600	0.000	0.063
	0.380TYP		0.015TYP