HL Haolin Elec 2N5401 PNP Transistor Offering 0.6A Collector Current for Amplification and Switching

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Product Description

Product Overview

The 2N5401 is a PNP transistor designed for switching and amplification in high-voltage applications, including telephony. It offers low current capabilities with a maximum of 600mA and high voltage handling up to 160V.

Product Attributes

Brand: SHENZHEN HAOLIN ELECTRONICS TECHNOLOGY CO., LTD
Origin: Shenzhen
Material: TO-92 Plastic-Encapsulate

Technical Specifications

Parameter	Symbol	Test conditions	MIN	TYP	MAX	Units
Collector-Base Voltage	VCBO				-160	V
Collector-Emitter Voltage	VCEO				-150	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-0.6	A
Collector Power Dissipation	PC	TA=25			0.625	W
Junction Temperature	Tj				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC= -100A, IE=0	-160			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-150			V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10A, IC=0	-5			V
Collector cut-off current	ICBO	VCB= -120 V, IE=0			-50	nA
Emitter cut-off current	IEBO	VEB= -3V, IC=0			-50	nA
DC current gain	hFE(1)	VCE= -5V, IC=-1 mA	80
	hFE(2)	VCE= -5V, IC=-10 mA	60	240
	hFE(3)	VCE= -5V, IC=-50 mA	50
Collector-emitter saturation voltage	VCE(sat)	IC= -50mA, IB= -5 mA			-0.5	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB= -5 mA			-1	V
Transition frequency	fT	VCE=-5V, IC=-10mA f =30MHz	100	300		MHz